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Bild	Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [25°]	Produkt Feature
	G3R350MT12J	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7	1200	350	10	-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested	Anfragen
	G2R1000MT33J	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7	3300	1000	5	-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin	Anfragen

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